Ultra-Tough/Ultra-Hard Diamond

  • Hardness 75 ~ 100 GPa

    Fracture toughness up to 10 MPa m 1/2

    Thermal Conductivity 2000 W/(m·K)

    Orientation 2P or 4P available

    Size from 1mm×1mm to 20mm×20mm Tolerance <+0.05mm

    Thickness from 0.3 to 1.5 mm Tolerance <+0.03mm

    Shapes Upon request

    Roughness Laser cut or surface polished (~20 nm Ra)

    Nitrogen content <20 ppm

  • Hardness 130 200 GPa

    Thermal Conductivity 2000 W/(m·K-1)

    Orientation 2P or 4P

    Roughness Laser cut or main planes polished (~20nm Ra)

    Dimension 1mm×1mm to 25mm×25 mm (Tolerance <+0.05mm)

    Thickness 0.3mm to 1.5 mm (Tolerance <+0.03mm)

    Shape Upon Request

  • Hardness 80 to 120 GPa

    Thermal Conductivity 2000 W/(m·K-1)

    Orientation 2P, 4P

    Roughness Laser cut or main planes polished (~20nm Ra)

    Dimension 1mm×1mm to 20×20 mm (Tolerance <+0.05mm)

    Thickness 0.3mm to 1.5 mm (Tolerance <+0.03mm)

    Shape Upon Request

  • Hardness ~100 GPa

    Density 3.51 ± 0.01 g/cm3

    Thermal Conductivity >1300 W/(m·K-1)

    Roughness Smooth laser cut or high quality polish (~30nm Ra)

    Size 1mm×1mm to 50×50 mm

    Thickness 0.2mm to 1.5 mm upon request

    Shape Standard and customized shape

CVD Polycrystalline Diamond

  • Size 1” to 6” in diameter, custom size available upon request

    Thickness 0.3 - 2.0 mm

    Thermal Conductivity 1500 to 2000+ W/(m·K) upon request

    Surface finish as grown

    Typical Wafer Bow 25micron (2” diameter wafer, 1 mm thick)

    Typical TTV 25 micron (2” diameter wafer, 1 mm thick)

  • Wafer Size 1” to 6” in diameter

    Thickness 0.05mm - 1 mm

    Thermal Conductivity 1500 - 2200 W/(m·K) , upon request

    Surface finish Double Side Lapped (RA <200nm), double side polished (RA <10nm)

    Typical TTV < 30micron for 2” wafer , 1mm thick

    Impurity None

    Surface Graphite None

  • Size 2” to 4” in diameter

    Metal layer Ti/Cu, Ti/Pt/Cu, Ti/Pt/Au etc.

    Metal Thickness 100 nm- 75 micron, upon request

    Diamond Thermal Conductivity 1200 - 2200 W/(m·K) ( upon request)

    Peel Test Strength >20 N/m

  • Wafer Substrate Silicon, AlN, SiC

    Diamond structure DLC, UNCD, NCD, Multilayer Diamond, MCD, Boron Doped Diamond

    Applicable Size 1” to 6” in diameter

    Film thickness 200nm to 50 micron

Optical Diamond Windows

  • Surface finish‍ ‍ RA < 50 nm

    Thickness‍ ‍ > 100 micron (upon request)

    Thickness Parallelism ± 5 micron

    Fracture strength >400MPa

    Flatness ± 5 micron

    Helium Leak Rate <2 × 10⁻¹⁰ atm·cm³/s

  • Material High quality free standing diamond film

    Dimension 10mm to 2” diameter

    Thickness 10-50 micon

    Structure Silicon Frame or Free Standing

    • Thermal conductivity ~1800–2200 W/m·K

    • Low X-ray absorption

    • Radiation hardness and chemical inertness withstands intense beams at harsh conditions

    • Spectral transmission Surface Ra<10nm, minimal scattering for demanding setups

    • Mechanical durability Low CTE (~1–2 ppm/K), and high strength for reliable UHV windows and components

    • Availability Per custom designed flange structure or double side polished optical diamond wafer

    • Dielectric Performance Extremely low loss tangent tan δ < 5 × 10⁻⁵

    • Thermal conductivity 2000–2200 W/m·K handles power densities >10–20 kW/cm²

    • Mechanical: Young's modulus ~1000–1140 GPa

    • Available Sizes: 50, 80, 90, 100 mm in diameter, up to 2.0mm thick

    • Surface Finish: double sided polished RA<10nm

    • Reliability in Fusion: Proven resilience to UHV, high-power pulses, thermal cycling

Application Development

    • Device Ready High-quality, large-area CVD diamond coatings at <400°C.

    • Special application ≥85% uniform DLC and NCD coatings inside high-aspect-ratio (>30:1) metal tubes.

    • Significant progress achieved in evaluating enhanced electronic effects in ultra-pure CVD single-crystal diamond. Stay tuned for details…